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High Concentrations of Erbium In Crystal Silicon by Thermal Or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

J. S. Custer ,
A. Polman ,
E. Snoeks  and
G. N. van den Hoven
J. S. Custer
Affiliation:
FOM Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
A. Polman
Affiliation:
FOM Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
E. Snoeks
Affiliation:
FOM Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
G. N. van den Hoven
Affiliation:
FOM Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
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Abstract

Solid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 × 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 × 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 101
Copyright
Copyright © Materials Research Society 1993

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References

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