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High Frequency Thin Film Acoustic Ferroelectric Resonators

Published online by Cambridge University Press:  21 March 2011

Paul Kirby
Affiliation:
Nanotechnology and Microsystems group, School of Industrial and Manufacturing Sciences, Cranfield University, Cranfield, Bedford, MK43 0AL, UK
Qing-Xin Su
Affiliation:
Nanotechnology and Microsystems group, School of Industrial and Manufacturing Sciences, Cranfield University, Cranfield, Bedford, MK43 0AL, UK
Eiju Komuro
Affiliation:
Telecom Technology Development Centre, TDK Corporation, 2-15-7, Higashi-Ohwada, Ichikawa-shi, Chiba, 272-8558, Japan
Masaaki Imura
Affiliation:
Telecom Technology Development Centre, TDK Corporation, 2-15-7, Higashi-Ohwada, Ichikawa-shi, Chiba, 272-8558, Japan
Roger Whatmore
Affiliation:
Nanotechnology and Microsystems group, School of Industrial and Manufacturing Sciences, Cranfield University, Cranfield, Bedford, MK43 0AL, UK
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Abstract

Both ZnO and PZT Thin Film Bulk Acoustic Resonator filters were fabricated, tested and modeled in this study. The development of an accurate Mason model allows the effect of particular parasitic components on the microwave s-parameters in the region of the series and parallel resonances to be identified. The parasitic components that limit the performance of our ZnO and PbZr0.3Ti0.7O3 Thin Film Bulk Acoustic Resonator filters are analysed. From an analysis of PbZr0.3Ti0.7O3 Thin Film Bulk Acoustic Resonator measurements values for the longitudinal acoustic velocity and electromechanical coupling coefficient can be derived. Measured PbZr0.3Ti0.7O3 Thin Film Bulk Acoustic Resonator filter responses confirm that the larger electromechanical coupling coefficients in this material compared to ZnO give wider filter band-widths.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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