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  • MRS Proceedings, Volume 1283
  • January 2011, mrsf10-1283-b03-08

HIGH FREQUENCY TOP-GATED GRAPHENE RF AMBIPOLAR FETs USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

  • Osama M. Nayfeh (a1) and Madan Dubey (a1)
  • DOI: http://dx.doi.org/10.1557/opl.2011.547
  • Published online: 17 March 2011
Abstract
ABSTRACT

Ambipolar top-gated field effect transistors (FETs) based on large area Cu catalyzed CVD-grown monolayer graphene interfaced to advanced dielectrics have been constructed and examined both for their material and electrical qualities. Interfacing of the graphene with novel insulators/substrates could be tailored for the particular application and provide for enhanced device functionality. In contrast to graphene FETs using SiO2-based top-gate dielectric, which show asymmetric electron/hole mobility (with larger hole mobility), and Dirac point shifted to positive levels, FETs constructed using advanced AlN show Dirac point almost near neutral levels and near symmetric electron/hole mobility. The DP is shifted likely due to compensation of the intrinsic p-type doping by n-type doping introduced by the AlN deposition and potentially via a contribution of polarization-induced carrier density. Finally, we demonstrate a top-gated graphene FET with the first observation of RF operation with GHz cut-off frequency based on large area CVD graphene.

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