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High Performance Organic Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

Tommie W. Kelley ,
Dawn V. Muyres ,
Paul F. Baude ,
Terry P. Smith  and
Todd D. Jones
Tommie W. Kelley*
Affiliation:
3M Company, Electronics and Inorganics
Dawn V. Muyres
Affiliation:
3M Company, Electronics and Inorganics
Paul F. Baude
Affiliation:
3M Company, Electronics and Inorganics
Terry P. Smith
Affiliation:
3M Company, Electronics and Inorganics
Todd D. Jones
Affiliation:
Organic Materials Technology Centers, St. Paul, Minnesota
*
*Corresponding author, 3M Center, 201-1N-35, St. Paul, MN 55144-1000
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Abstract

We report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 771: Symposium L – Organic and Polymeric Materials and Devices , 2003 , L6.5
Copyright
Copyright © Materials Research Society 2003

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