Skip to main content
×
×
Home

High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment

  • Moon Young Shin (a1), Sang-Myeon Han (a1), Min-Cheol Lee (a1), Hee-Sun Shin (a1), Min-Koo Han (a1), Jang-Yeon Kwon (a2) and Takashi Noguchi (a2)...
Abstract

We have proposed nitrous oxide (N2O) plasma pre-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from –3V to –1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

Copyright
References
Hide All
[1] Theiss, S. D., Carey, P. G., Smith, P. M., Wickboldt, P., Sigmon, T. W., Tung, Y. J., King, T.-J., IEDM 98, p.257∼p. 260
[2] Gosain, D.P., Noguchi, T., Usui, S., Jpn. J. Appl. Phys., Vol.39 (2000), pp.L179∼L181
[3] Young, N.D., French, I.D., Trainor, M. J., Murley, D. T., McCulloch, D. J., Wilks, R. W., IDW 99, p.219∼222
[4] Tung, Yehi-Jiun, Carey, Paul G., Smith, Patrick M., Thesis, Steven D., Davis, Gary A., Aebi, Verle and King, Tsu-Jae, Tech. Digest of SID 1998, Anaheim, USA, pp.887890, 1998.
[5] Lee, M. C., Han, S. M., Kang, S. H., Shin, M. Y. and Han, M. K., IEDM 03,pp.215218
[6] Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., Physical review letters, vol. 87, No. 16, pp.165506, 2001
[7] Tuttle, Blair, Walle, Chris G. Van de, Physical review B, Vol. 59, No. 20, pp.1288412889, 1999
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×