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High Resolution X-Ray Studies of Ga1–xInxAs Epilayers on GaAs Substrates

Published online by Cambridge University Press:  22 February 2011

Yushan Shi  and
Mark Sutton
Yushan Shi
Affiliation:
Center for the Physics of Materials and Department of Physics, McGill University, 3600, University Street, Montreal, Québec, Canada H3A 2T8
Mark Sutton
Affiliation:
Center for the Physics of Materials and Department of Physics, McGill University, 3600, University Street, Montreal, Québec, Canada H3A 2T8
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Abstract

By using the techniques of normal Bragg scattering and glancing incidence scattering, we have measured both the out-of-plane and in-plane structures of GaixInxAs epilay-ers grown on GaAs (001) face by MOVPE. The data presented in this paper were collected from two samples: a thick epilayer of 40, 000A Ga0.84In0.16As, and a thin epilayer of 500Å Ga0.84In0.19As, which are lattice-mismatched with the substrate by about 1.14% and 1.36% respectively according to the Vegard's law. The measured average lattice constants of the thick epilayer agree with the expectation both out-of-plane and in-plane and show nearly complete structural relaxation. An uniaxial in-plane modulation in the thick epilayer has been observed. The out-of-plane and in-plane data of the thin epilayer demonstrate a tetragonal distortion of the lattice, and the Poisson's ratio is calculated to be 0.36. The averaged in-plane lattice constant is still 0.18% larger than that of the substrate, which results in a complex structure at the epitaxial interface. An in-plane misalignment along one (110) axis in the thin epilayer has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 461
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Bauer, E.G., Dodson, B.W., Ehrlich, D.J., Feldman, L.C., Flynn, C.P., Geis, M.W., Harbison, J.P., Matyi, R.J., Peercy, P.S., Petroff, P.M., Phillips, J.M., Stringfellow, G.B. and Zangwill, A., J. Mater. Res., 5, 852, (1990).Google Scholar
[2] Wortis, M., in Fundamental Problems in Statistical Mechanics VI. edited by Cohen, E.G.D. (Elsevier Science Publishers B.V. 1985), p. 87.Google Scholar
[3] Lagally, M. (editor), Kinetics of Ordering and Growth at Surfaces, (Plenum, New York, 1990).Google Scholar
[4] Frank, F. and van der Merwe, J., Proc. Roy. Soc. (London) A198, 216 (1949).Google Scholar
[5] Honjo, G. and Yagi, K., in Current Topics in Materials Science, edited by Kaldis, E. (North Holland, Amsterdam, 1980), p. 195.Google Scholar
[6] Jain, S., Willis, J. and Bullough, R., Advances in Physics 2, 129 (1990).Google Scholar
[7] Marra, W., Eisenberger, P. and Cho, A., J. Appl. Phys. 50, 6927 (1979);Google Scholar
Eisenberger, P. and Marra, W., Phys. Rev. Letters 46, 1081 (1981).Google Scholar
[8] Cowley, R., Acta Cryst. A43, 825 (1987);Google Scholar
Lucas, C., Gartstein, E. and Cowley, R., Acta Cryst. A45, 416 (1989);Google Scholar
Gartstein, E., and Cowley, R., Acta Cryst. A46, 576 (1990).Google Scholar
[9] Shi, Y., Ph.D thesis, McGill University, in preparation.Google Scholar
[10] Busing, W. and Levy, H., Acta Cryst. 22, 457 (1967).Google Scholar
[11] Mochrie, S.G.J., J. Appl. Cryst. 21, 1 (1988).Google Scholar
[12] Robinson, I., Rev. Sci. Instrum. 60, 1541 (1989).Google Scholar
[13] Olsen, G. and Smith, R., Phys. Stat. Sol. (a) 31, 739 (1975).Google Scholar
[14] Nagai, H., J. Appl. Phys., 45, 3789 (1974).Google Scholar
[15] Kavanagh, K., Capano, M., Hobbs, L., Barbour, J., Maree, P., Schaff, W., Mayer, J., Pettit, D., Woodall, J., Stroscio, J. and Feenstra, R., J. Appl. Phys. 64(10), 4843 (1988).Google Scholar