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High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Published online by Cambridge University Press:  17 March 2011

P. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Y.G. Zhou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
H.M. Bu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
W.P. Li
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Z.Z. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.ChinaE-mail:ydzheng@netra.nju.edu.cn
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Abstract

Metal-insulator-semiconductor structures are fabricated by depositing SiO2 films on an MOCVD-grown n-type GaN epitaxial layer and a GaN/Al0.4Ga0.6N/GaN double heterojunction. The SiO2 films are grown by plasma-enhanced chemical vapor deposition. High-frequency C-V characteristics show the agreement of the measured C-V curve of SiO2/n-GaN with an ideal curve in deep depletion and the very small hysteresis, which indicates that the interface traps concentration in the sample is low. However, for SiO2/GaN/Al0.4Ga0.6N/GaN, the measured C-V curves show a notable flat-band shift of about 9.2 V and a typical polarization hysteresis window. These show the influence of the polarization charges in this structure. The capacitance on SiO2/GaN/Al0.4Ga0.6N/GaN reaches a minimum value under around –5V bias. The saturation at a minimum value of the C-V curve indicates the presence of holes accumulation in the MIS structure. These results imply that the piezoelectric effect in GaN/Al0.4Ga0.6N/GaN play an important role for the formation of the p-channel.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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