Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-24T14:06:01.121Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes

Published online by Cambridge University Press:  01 February 2011

Ibrahim Kimukin ,
Necmi Biyikli ,
Tolga Kartaloglu ,
Orhan Aytür  and
Ekmel Ozbay
Ibrahim Kimukin
Affiliation:
Department of Physics, Bilkent University, Bilkent, Ankara 06800 TURKEY
Necmi Biyikli
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, 06800 TURKEY
Tolga Kartaloglu
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, 06800 TURKEY
Orhan Aytür
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, 06800 TURKEY
Ekmel Ozbay
Affiliation:
Department of Physics, Bilkent University, Bilkent, Ankara 06800 TURKEY
Get access

Abstract

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.22
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Carrano, J. C., Li, T., Grudowski, P. A., Dupuis, R. D., and Campbell, J. C., IEEE Circuits Devices Mag., 15, 15 (1999).Google Scholar
[2] Razeghi, M. and Rogalski, A., J. Appl. Phys., 79, 7433 (1996).Google Scholar
[3] Monroy, E., Calle, F., Pau, J. L., Sanchez, F. J., Munoz, E., Omnes, F., Beaumont, B., and Gibart, P., J. Appl. Phys., 88, 2081 (2000).Google Scholar
[4] Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Adivarahan, V., Yang, J., Simin, G., and Khan, M. Asif, Appl. Phys. Lett., 79, 866 (2001).Google Scholar
[5] Biyikli, N., Kartaloglu, T., Aytur, O., Kimukin, I., and Ozbay, E., Appl. Phys. Lett., 79, 2838 (2001).Google Scholar
[6] Biyikli, N., Aytur, O., Kimukin, I., Tut, T., and Ozbay, E., Appl. Phys. Lett., 81, 3272 (2002).Google Scholar
[7] Yang, B., Lambert, D. J. H., Li, T., Collins, C. J., Wong, M. M., Chowdhury, U., Dupuis, R. D., and Campbell, J. C., Electron. Lett., 36, 1866 (2000).Google Scholar
[8] Chen, C. H., Chang, S. J., Su, Y. K., Chi, G. C., Chi, J. Y., Chang, C. A., Sheu, J. K., and Chen, J. F., IEEE Photon. Technol. Lett., 13, 848 (2001).Google Scholar
[9] Seo, Sangwoo, Lee, K. K., Sangbeom Kang, Huang, S., William Doolittle, A., Jokerst, N. M., Brown, A. S., and Brooke, M. A., IEEE Photon. Technol. Lett., 14, 185 (2002).Google Scholar
[10] Tarsa, E. J., Kozodoy, P., Ibbetson, J., Keller, B. P., Parish, G., and Mishra, U., Appl. Phys. Lett., 77, 316 (2000).Google Scholar
[11] Collins, C. J., Chowdhury, U., Wong, M. M., Yang, B., Beck, A. L., Dupuis, R. D., and Campbell, J. C., Appl. Phys. Lett., 80, 3754 (2002).Google Scholar
[12] Carrano, J. C., Lambert, D. J. H., Eiting, C. J., Collins, C. J., Li, T., Wang, S., Yang, B., Beck, A. L., Dupuis, R. D., and Campbell, J. C., Appl. Phys. Lett., 76, 924 (2000).Google Scholar
[13] Unlu, M. S. and Strite, S., J. Appl. Phys. Rev., 78, 607 (1995).Google Scholar
[14] Ozbay, E., Kimukin, I., Biyikli, N., Aytur, O., Gokkavas, M., Ulu, G., Unlu, M. S., Mirin, R. P., Bertness, K. A., and Christensen, D. H., Appl. Phys. Lett., 74, 1072 (1999).Google Scholar
[15] Biyikli, N., Kimukin, I., Aytur, O., Gokkavas, M., Unlu, M. S., and Ozbay, E., IEEE Photon. Technol. Lett., 13, 705 (2001).Google Scholar
[16] Kimukin, I., Biyikli, N., Butun, B., Aytur, O., Unlu, M. S., and Ozbay, E., IEEE Photon. Technol. Lett., 14, 366 (2002).Google Scholar
[17] Kishino, K., Yonemaru, M., Kikuchi, A., and , Toyoura, Phys. Stat. Sol. (A), 188, 321 (2001).Google Scholar
[18] Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z., Kolbas, R. M., Cook, J. W. Jr, and Schetzina, J. F., MRS Internet J. Nitride Semicond. Res. 4S1, art. G5.2 (1999).Google Scholar