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Hillock formation and thermal stresses in thin Au films on Si substrates

  • Linda Sauter (a1), T. John Balk (a2), Gerhard Dehm (a3), Julie A. Nucci (a1) and Eduard Arzt (a1)...


The wafer curvature technique was used to analyze stresses in fine-grained, 50 nm to 2 μm thick Au films on silicon substrates between room temperature and 500°C. The microstructural evolution was analyzed by scanning electron microscopy (SEM), focused ion beam (FIB) microscopy and transmission electron microscopy (TEM). In situ heating experiments inside a scanning electron microscope provided a comparison between the morphological development and the stress-temperature behavior of the film. Hillock formation was observed, but it can only partially account for the stress relaxation measured by the wafer curvature technique.



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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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