Hostname: page-component-7c8c6479df-nwzlb Total loading time: 0 Render date: 2024-03-28T16:44:09.283Z Has data issue: false hasContentIssue false

Hot Filament Assisted CVD of Titanium Nitride Films

Published online by Cambridge University Press:  22 February 2011

Sadanand V. Deshpande
Affiliation:
Department of Chemical EngineeringUniversity of Michigan, Ann Arbor, MI 48109
Erdogan Gulari
Affiliation:
Department of Chemical EngineeringUniversity of Michigan, Ann Arbor, MI 48109
Get access

Abstract

Titanium nitride thin films have been deposited using a novel Hot Filament Chemical Vapor Deposition (HFCVD) technique. In this technique, a resistively heated tungsten wire (∼1700°C) is used to decompose ammonia to obtain highly reactive nitrogen precursor species. This approach allows for low temperature deposition of nitride thin films. In the past, we have used this method to deposit good quality silicon and aluminum nitride films. Titanium nitride thin films have been deposited on Si(100) at substrate temperatures from 500°C to 600°C. These films were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction, Rutherford backscattering spectroscopy (RBS) and scanning electron microscopy. The effects of deposition pressure, substrate temperature and titanium chloride flow rate on film properties have been studied. TiN films with resistivities as low as 80.0 μΩ-cm have been deposited. RBS analysis indicates that the films serve as excellent diffusion barriers for copper and aluminum metallization on silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nicolet, M.-A., Thin Solid Films 52, 415 (1978).Google Scholar
2. Lineback, J.R., Electronics, July 23, pp. 63 (1987).Google Scholar
3. Nakasaki, Y., Suguro, K., Shima, S., and Kashiwagi, M., J. Appl. Phys. 64, 3263 (1988).Google Scholar
4. Siedel, T.E., Mat. Res. Soc. Symp. Proc. 260, 3 (1992).Google Scholar
5. Olowolafe, J.O., Li, J., and Mayer, J.W., J. Appl. Phys. 68, 6207 (1990).Google Scholar
6. Deshpande, S.V., Dupuie, J.L., and Gulari, E., Appl. Phys. Lett. 61, 1420 (1992).Google Scholar
7. Dupuie, J.L. and Gulari, E., J. Vac. Sci. Technol. A 10 (1), 18, (1992).Google Scholar
8. Vasile, M.J., Emerson, A.B., and Baiocchi, F.A., J. Vac. Sci. Technol. A 8 (1), 99 (1990).Google Scholar
9. Saha, N.C. and Tompkins, H.G., J. Appl. Phys. 72, 3072 (1992).Google Scholar
10. Buiting, M.J. and Otterloo, A.F., J. Electrochem. Soc. 139, 2580 (1992).Google Scholar
11. Olowolafe, J.O., Mogab, C.J., Gregory, R.B., and Kottke, M., J. Appl. Phys. 72,4099 (1992).Google Scholar
12. Grigorov, K.G., Grigorov, G.I., Stoyanova, M., Vignes, J.-L., Langeron, J.-P., Denjean, P., and Perriere, J., Appl. Phys. A 55, 502 (1992).Google Scholar