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Hrem and Nano-Scale Microanalysis of the Titanium-Silicon Interfacial Reaction

Published online by Cambridge University Press:  21 February 2011

T. Kouzaki ,
S. Ogawas  and
S. Nakamura
T. Kouzaki
Affiliation:
Matsushita Technoresearch, Inc., Moriguchi, Osaka 570, Japan
S. Ogawas
Affiliation:
Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, Japan
S. Nakamura
Affiliation:
Matsushita Technoresearch, Inc., Moriguchi, Osaka 570, Japan
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Abstract

The interfacial reaction of titanium with single crystal silicon has been characterized using high-resolution electron microscopy(HREM) combined with nano-scale microanalysis. HREM shows that there is an amorphous interdiffused alloy formation at titanium-silicon interfaces. The reacted layer is about 1.7nm thick for single crystal silicon, but is 2.5nm thick for sputter-amorphized silicon. Annealing increases the thickness of the amorphous alloy. We have used high-spatial-resolution microanalysis to obtain energy dispersive spectrometry (EDS) using a 2nm probe size. The results clearly show that reliable composition analysis can be obtained at this level since some of the layers are only about 2nm thick. It was found that the amorphous alloy composition was Ti55Si45 for the sputter-amorphized silicon. Futhermore we ascertained no induced reaction by 2nm probe electron beam irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 111
Copyright
Copyright © Materials Research Society 1990

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References

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