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Hydrogen in RF Reactive Magnetron Sputtered Silicon Nitride Films

Published online by Cambridge University Press:  22 February 2011

Chi-Hsien Lin ,
J. B. Wachtman ,
G. H. Sigel ,
R. L. Pfeffer ,
T. P. Monahan  and
R. T. Lareau
Chi-Hsien Lin
Affiliation:
Department of Ceramics, Rutgers University, Piscataway, NJ 08855.
J. B. Wachtman
Affiliation:
Department of Ceramics, Rutgers University, Piscataway, NJ 08855.
G. H. Sigel
Affiliation:
Department of Ceramics, Rutgers University, Piscataway, NJ 08855.
R. L. Pfeffer
Affiliation:
U.S. Army Research Laboratory, EPSD, Fort Monmouth, NJ 07703.
T. P. Monahan
Affiliation:
U.S. Army Research Laboratory, EPSD, Fort Monmouth, NJ 07703.
R. T. Lareau
Affiliation:
U.S. Army Research Laboratory, EPSD, Fort Monmouth, NJ 07703.
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Abstract

ABSTRACT: Silicon nitride films (a-SixN1−x:H) have been prepared by rf reactive magnetron sputtering from a silicon target in a mixture gas of Ar, N2, and H2. The effects of the presence of hydrogen gas have been related to the refractive index, deposition rate, etch rate, and the Si-H and N-H bonding in the films. Hydrogen contents were measured by a quadrupole secondary ion mass spectrometer (SIMS) using deuterium implanted samples as reference standards. The deuterium implanted samples were annealed at 900°C for various periods of time to study the diffusion behavior of deuterium and hydrogen in a Si-rich and a nearly stoichiometric silicon nitride film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 21
Copyright
Copyright © Materials Research Society 1993

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References

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