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III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

  • Kazuo Uchida (a1), Hiroki Tokunaga (a1), Yoshiaki Inaishi (a1), Nakao Akutsu (a1), Koh Matsumoto (a1), Tsuyoshi Itoh (a2), Takashi Egawa (a2), Takashi Jimbo (a2) and Masayoshi Umeno (a2)...
Abstract

We introduce III-V nitrides growth including GaN as well as InGaN by a newly developed atmospheric-pressure metal-organic vapor phase epitaxy system with a three layered flow channel which is a promising system for a large scale production. First, we have shown through computer simulation that a laminar flow of gases is maintained at 1000 °C in the three layered flow channel. Second, as a part of epitaxial results, we have found that the surface roughness of a low temperature-grown buffer layer on sapphire substrates, which can be measured by atomic force microscope, should be minimum in order to grow high quality GaN. We also report the growth of a double heterostructure of Ino. 15Gao.85N/GaN which shows a strong near band-edge emission in room temperature photoluminescence.

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[1] Nakamura, S. in Gallium Nitride and Related Materials, edited by Ponce, F. A., Dupuis, R. D., Nakamura, S. and Edmond, J. A. (Mater. Res. Proc.395, Pittsburgh PA, 1996), pp.879887.
[2] Koike, M., Shibata, N., Yamasaki, S., Nagai, S., Asami, S., Kato, H., Koide, N., Amano, H. and Akasaki, I. in Gallium Nitride and Related Materials, edited by Ponce, F. A., Dupuis, R. D., Nakamura, S. and Edmond, J. A. (Mater. Res. Proc.395, Pittsburgh PA, 1996), pp. 889895.
[3] Kong, H., Leonard, M., Bulman, G. Negley, G. and Edomond, J. in Gallium Nitride and Related Materials, edited by Ponce, F. A., Dupuis, R. D., Nakamura, S. and Edmond, J. A. (Mater. Res. Proc.395, Pittsburgh PA, 1996), pp. 903907.
[4] Hidaka, J., Arai, T., Tokunaga, H. and Matsumoto, K. (Proc. of 8th Int. Conf. on Metal Organic Vapour Phase Epitaxy Cardiff, Wales, UK, 1996), to be appeared in J. of Cryst. Growth.
[5] Kapolnek, D., Wu, X., Heying, B., Keller, S., Keller, B., Mishra, U., DenBaars, S. and Speck, J., Appl. Phys. Lett. 67, pp. 15411543 (1996)
[6] Nakamura, S., Jpn. J. Appl. Phys. 30, pp. L1705L1707 (1991).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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