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Imaging the Dimers in Si (111) 7×7

Published online by Cambridge University Press:  10 February 2011

L. D. Marks ,
E. Bengu ,
R. Plass ,
T. Ichimiya ,
P. M. Ajayan  and
S. Iijima
L. D. Marks
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
E. Bengu
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
R. Plass
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
T. Ichimiya
Affiliation:
Fundamental Research Lab, NEC Corporation, Ibaraki, JAPAN
P. M. Ajayan
Affiliation:
Fundamental Research Lab, NEC Corporation, Ibaraki, JAPAN
S. Iijima
Affiliation:
Fundamental Research Lab, NEC Corporation, Ibaraki, JAPAN
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Abstract

Recent work has demonstrated that high resolution electron microscopy in plan-view imaging mode is capable of directly imaging surfaces at a resolution of better than 2 Å. For the particular case of the Si (111) 7×7 surface, we have been able to image not only the adatoms visible in STM images, but all the atoms in the top three atomic layers including the dimers. The potential applications of this approach and its limitations will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 259
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Bengu, E., Plass, R., Marks, L. D., Ichihashi, T., Ajayan, P. M. and Iijima, S., Phys. Rev. Letts. 77, 4226 (1996).Google Scholar
2. Marks, L. D., Ultramicroscopy 62, 43 (1996).Google Scholar
3. Andrews, H. C. and Hunt, B. R., Digital Image Restoration, Prentice-Hall, New Jersey, 1977.Google Scholar