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Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

Published online by Cambridge University Press:  01 February 2011

Q. Wang ,
Manmohan Daggubati ,
Hossein Paravi ,
Rong Yu  and
Xiao Feng Zhang
Q. Wang
Affiliation:
Fairchild Semiconductor Corporation, 3333 West 9000 South, West Jordan, UT 84088
Manmohan Daggubati
Affiliation:
Fairchild Semiconductor Corporation, 3333 West 9000 South, West Jordan, UT 84088
Hossein Paravi
Affiliation:
Fairchild Semiconductor Corporation, 3333 West 9000 South, West Jordan, UT 84088
Rong Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Xiao Feng Zhang
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

The precipitation of interstitial oxygen (Oi) in heavily arsenic doped Czochralski (CZ) silicon wafers (As-wafer) has been studied for both polysilicon and damaged back surfaces. After annealed at 1200°C for 45 minutes and 950°C for 15hrs sequentially, the As-wafers with polysilicon show no Oi precipitation in the bulk while polyhedral Oi precipitates are observed at the interface between polysilicon and the silicon substrate. They exhibit a habit plane of {100}. The lack of the Oi precipitation in the bulk may reduce the total gettering efficiency of the polysilicon layer on the As-wafer. The same annealing led to rod-like SiOx precipitates in the wafers with damaged back surface. These precipitates extended about 1um into the bulk and had a habit plane of {111}. This morphology has high interfacial energy and is only possible when strain relief is dominant. The Oi outdiffusion has been observed to be same for both backside surface conditions and is only determined by annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.18
Copyright
Copyright © Materials Research Society 2005

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