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Impedance Spectroscopy of the Polymer Thick Film Resistor/Conductor Interface

Published online by Cambridge University Press:  25 February 2011

S. Jussila ,
H. Stubb  and
S. Pienimaa
S. Jussila
Affiliation:
Technical Research Centre of Finland, Semiconductor Laboratory, Otakaari 7 B, SF–02150 Espoo, Finland
H. Stubb
Affiliation:
Technical Research Centre of Finland, Semiconductor Laboratory, Otakaari 7 B, SF–02150 Espoo, Finland
S. Pienimaa
Affiliation:
Nokia Mobile Phones Ltd., P.O.BOX 86, SF–24101 Salo, Finland
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Abstract

Impedance spectroscopy has been used to study the electric properties of screen—printed polymer thick film (PTF) resistors over the frequency range 10 Hz — 500 MHz. With a suitable test pattern it was possible to separate the impedance response of the resistor/conductor interface from that of the resistive element itself. This proved to be useful when analysing, whether the manufacturing parameters have more influence on the properties of the interface or the bulk resistor. The main varied manufacturing parameters were curing method, curing temperature and the resistor/conductor interface (pure copper vs. silver treated copper). Furthermore, the test components were kept for 600 hours in a humid environment (85ºC / 85% RH), and after this the impedance measurements were repeated. Analysis of the effects of these manufacturing and environmental conditions on the electrical properties of PTF resistors are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 41
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Castelli, G., Lovati, G., Proc. 5th Intern. Microelectronics Conf. (Tokyo, Japan 1988), pp. 75–82.Google Scholar
2. Leppävuori, S., Pienimaa, S., Muilu, M., Hybrid Circuits 7 (3), 68–71 (1984)Google Scholar
3. Chiang, C.K. and Franklin, A.D., Solid State Comm. 40, 775, (1981).Google Scholar
4. Fourrier-Lamer, A., Fizazi, A., Belhadj-Tahar, N., Fontanille, A. and Soum, A., Synth. Met. 24, 95, (1988).Google Scholar
5. Takahashi, K.M. and Sullivan, T.M., J. Appl. Phys. 66 (7), 3192 (1989).Google Scholar
6. Takahashi, K.M., J. Appl. Phys. 67 (7), 3419 (1990).Google Scholar