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Impurity Incorporation During Si Ultrafast Solidification to the Crystalline and Amorphous Phase

  • Salvatore Ugo Campisano (a1)
Abstract

Impurity segregation at the liquid-solid interface, interfacial instabilities due to constitutional supercooling and precipitation are compared for the growth of a crystalline or of an amorphous phase from rapid solidification. Segregation at low concentration and interfacial instabilities at high concentrations are shown to give the same information. The impurity behaviour shows a distinct similarity between the crystalline and amorphous phases.

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