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In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

Published online by Cambridge University Press:  10 February 2011

C. R. Cho ,
R. A. Brown ,
O. Kononchuk ,
N. Yarykin ,
G. Rozgonyi  and
R. Zuhr
C. R. Cho
Affiliation:
North Carolina State University. Raleigh NC 27695-7916
R. A. Brown
Affiliation:
Present address: Departmcnt of Physics. Newv Jersey Institute ol Technology. Newark NJ 07102
O. Kononchuk
Affiliation:
Present address: SEH-America Inc. 4111 N.E. 112th Avenue, Vancouver, WA 98682
N. Yarykin
Affiliation:
On leave from the Institute of Microclectronics Technology RAS. Chernogolovka, 142432 Russia
G. Rozgonyi
Affiliation:
North Carolina State University. Raleigh NC 27695-7916
R. Zuhr
Affiliation:
Solid State Division. Oak Ridge National Laboratory, Oak Ridge TN
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Abstract

The evolution of defects in Czochralski and epitaxial p- and n-type silicon wafers following irradiation with He. Si or Ge ions at 80 K has been investigated by in situ deep level transient spectroscopy (DLTS). Defect annealing and formation reactions have been observed over the temperature range 80–350 K. In p-type silicon, new species-dependent levels are observed immediately after implantation, but these levels anneal out at or below room temperature. The wellknown divacancy and interstitial defects, usually reported after room temperature implantation, are revealed in the DLTS spectra only upon annealing at 160–200 K. In n-type silicon, vacancy-oxygen pairs are observed immediately after implantation. However, vacancy-related defects continue to form over a broad temperature range in samples implanted with Si or Ge. These observations are consistent with a model whereby vacancies and interstitials are released from defect clusters at temperatures >200 K to form divacancies and other defect pairs which are stable at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 73
Copyright
Copyright © Materials Research Society 1998

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References

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