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In Situ Parametric Investigation of the Mechanism of Diamond Film Deposition from Low Energy Ion Beams

Published online by Cambridge University Press:  25 February 2011

Y. Lifshitz ,
S. R. Kasi  and
J. W. Rabalais
Y. Lifshitz
Affiliation:
University of Houston, Department of Chemistry, Houston, Texas 77204-5641 On sabbatical leave from Soreq NRC, Yavne 70600, Israel
S. R. Kasi
Affiliation:
University of Houston, Department of Chemistry, Houston, Texas 77204-5641
J. W. Rabalais
Affiliation:
University of Houston, Department of Chemistry, Houston, Texas 77204-5641
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Abstract

A general scheme for the analysis of deposition from hyperthermal (10–5000 eV) species is presented. Successful deposition involves consideration of species range, maximum local concentration obtainable, trapping efficiency, radiation damage, and sputtering efficiency. Examples of in situ parametric investigations of carbon deposition performed with a controlled mass selected UHV ion beam facility are presented. A subplantation model for diamond film deposition is discussed. XRD evidence for epitaxial growth of diamond(111) on Si(111) is provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 101
Copyright
Copyright © Materials Research Society 1989

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References

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