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Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics
Published online by Cambridge University Press: 10 February 2011
Abstract
Direct tunneling limits aggressive scaling of thermally-grown oxides to about 1.6 nm, a thickness at which the tunneling current. Jg, at one volt is ∼1 A/cm2. This paper presents results that demonstrate that stacked gate dielectrics prepared by remote plasma processing that include i) ultra-thin nitrided SiO2 interfacial layers, and ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness, EOT, to 1.1-1.0 nm before Jg, > 1 A/cm2.
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- Copyright © Materials Research Society 2000
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