Skip to main content
×
×
Home

Indium in silicon: a study on diffusion and electrical activation.

  • S. Scalese (a1), A. La Magna (a1), G. Mannino (a1), V. Privitera (a1), M. Bersani (a2), D. Giubertoni (a2), S. Solmi (a3) and P. Pichler (a4)...
Abstract

In this work we investigate the diffusion and the electrical activation of In atoms implanted in silicon with different energies, in the range 80-360 keV, after rapid thermal processing. Our investigation shows a clear dependence of In out-diffusion and electrical activation on the implant depth, being the electrically active fraction higher with increasing the implant energy for a fixed dose. The data are explained considering the balance between the local In concentration and the C background inside the silicon substrate and the formation of C-In complexes, which play a role in the enhanced electrical activation due to the shallower level they introduce into the Si band gap (Ev+0.111 eV), with respect to the rather deep level (Ev+0.156 eV) of In alone. In and C co-implantation has also been studied within this work, in order to confirm the key role of C in the increase of the electrical activation. A large increase of the electrical activation has been detected in the co-implanted samples, up to a factor of about 8 after annealing at 900°C. However, C precipitation occurs at 1100°C, with dramatic effects on the carrier concentration.

Copyright
References
Hide All
1.Antoniadis, D.A., Moskowitz, I., J. of Appl. Phys. 53, 9214 (1982);
2.Griffin, P.B., Cao, M., Voorde, P. Vande, Chang, Y.-L., Greene, W.M., Appl. Phys. Lett 73, 2986 (1998);
3.Kizilyalli, I.C., Rich, T.L., Stevie, F.A., Rafferty, C.S., J. of Appl. Phys. 80, 4944 (1996);
5.Baron, R., Young, M. H., Neeland, J. K., Marsh, O. J., Appl. Phys. Lett. 30, 594 (1977);
6.Sato, A., Suzuki, K., Horie, H., Sugii, T., Proceedings of the 8th International Conference on Microelectronic Test Structures, New York: IEEE, 259263 (1995);
7.Liu, J., Jeong, U., Mehta, S., Sherbondy, J., Lo, A., Shim, K.H., Lim, J. E., Ion Implantation Technology – 2000, ed. by Ryssel, H., Frey, L., Gyulai, J., Glawischnig, H., Piscataway, NJ, USA: IEEE, 66, 69 (2000);
8.Solmi, S., Parisini, A., Bersani, M., Giubertoni, D., Soncini, V., Carnevale, G., Benvenuti, A., Marmiroli, A., J. of Appl. Phys. 92, 1361 (2002);
9.Boudinov, H., Souza, J.P. de, Saul, C.K., J. of Appl. Phys. 86, 5909 (1999);
10.Biersack, J. P. and Haggmark, L. G., Nucl. Instrum. Methods 174, 257 (1980);
11.Chambost, E. De, Boyer, B., Rasser, B. and Schuhmacher, M., SIMS XII, Proceedings of the 12th International Conference on Secondary Ion Mass Spectrometry, Benninghoven, A., Bertrand, P., Migeon, H.-N. and Werner, H. W., Eds., Amsterdam: Elsevier Science, 2000, pp. 533536;
14.Raman, R., Law, M. E., Krishnamoorthy, V., Jones, K. S., Herner, S. B., Appl. Phys. Lett. 74, 1591 (1999);
21.Baron, R., Baukus, J. P., Allen, S. D., McGill, T. C., Young, M. H., Kimura, H., Winston, H. V., and Marsh, O. J., Appl. Phys. Lett. 34, 257 (1979);
22.Jones, C. E., Schafer, D., Scott, W., and Hager, R. J., J. of Appl. Phys. 52, 5148 (1981).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×