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Influence of Nanocrystallinity on Properties of Photodiode and TFT Image Sensor Structure

Published online by Cambridge University Press:  15 February 2011

A. Kolodziej ,
S. Nowak  and
P. Krewniak
A. Kolodziej
Affiliation:
Department of Electronics, University of Mining and Metallurgy, al. Mickiewicza 30, 30–059 Krakow, Poland, kolodzie@uci.agh.edu.pl
S. Nowak
Affiliation:
Department of Electronics, University of Mining and Metallurgy, al. Mickiewicza 30, 30–059 Krakow, Poland, kolodzie@uci.agh.edu.pl
P. Krewniak
Affiliation:
Department of Electronics, University of Mining and Metallurgy, al. Mickiewicza 30, 30–059 Krakow, Poland, kolodzie@uci.agh.edu.pl
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Abstract

This paper reports technological experiments which have strongly affected the properties of the multilayer image sensor structure. The high deposition rate and large hydrogen content during the reactive magnetron deposition process causes nanocrystallization of prepared silicon films. We also report experiments with laser crystallization. The effect of microstructure in a-Si:H films on TFT and pin diode characteristics has been investigated. Crystallinity was confirmed by Raman scattering, small angle X-ray diffraction (SAXD) and transmission electron microscopy (TEM). The parameters of the photodiodes such as quantum efficiency, dark and light currents, etc. have been tested using the measurements of samples in the configuration of a linear image sensor consisting of two rows, 30 to 160 pixels per row, with dimensions 0.1mm2-1mm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 913
Copyright
Copyright © Materials Research Society 1997

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References

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