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Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

  • Stefan Schöche (a1), Tino Hofmann (a1), Nebiha Ben Sedrine (a2), Vanya Darakchieva (a2) (a3), Xinqiang Wang (a4), Akihiko Yoshikawa (a5) and Mathias Schubert (a1)...

We apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1x1018 cm-3 and 3x1019 cm-3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.

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  • EISSN: 1946-4274
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