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Infrared Studies of the Double Acceptor Zinc in Silicon

Published online by Cambridge University Press:  25 February 2011

A. Dörnen ,
R. Kienle ,
K. Thonke ,
P. Stolz ,
G. Pensl ,
D. Grünebaum  and
N.A. Stolwijk
A. Dörnen
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-7000 Stuttgart 80, FRG
R. Kienle
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-7000 Stuttgart 80, FRG
K. Thonke
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-7000 Stuttgart 80, FRG
P. Stolz
Affiliation:
Institut für angewandte Physik, Universität Erlangen, D-8520 Erlangen, FRG
G. Pensl
Affiliation:
Institut für angewandte Physik, Universität Erlangen, D-8520 Erlangen, FRG
D. Grünebaum
Affiliation:
Institut für MetalIforschung, Universität Münster, D-4400 Münster, FRG
N.A. Stolwijk
Affiliation:
Institut für MetalIforschung, Universität Münster, D-4400 Münster, FRG
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Abstract

In the present paper, optical absorption studies on the neutral charge state of the double acceptor zinc in silicon are presented. Measurements were carried out in the mid infrared (MIR) and in the near infrared (NIR) region. The MIR absorption spectra show the excitation series of an effective-masslike hole, from which the Zn° level position is calculated to be at Ev + 319. 1 meV. A splitting of the ground state into 3 sublevels is assigned to hole-hole coupling and crystal-field splitting. Absorption spectra obtained in the NIR are interpreted in terms of an A° X-type bound exciton.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 21
Copyright
Copyright © Materials Research Society 1990

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References

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