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Inhibited SN Surface Segregation in Epitaxial SNxGE1-x Alloy Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

M.E. Taylor ,
G. He ,
C. Saipetch ,
H.A. Atwater  and
Thomas J. Watson
M.E. Taylor
Affiliation:
Laboratories of applied Physics California institute of Technology, Pasadena, CA 91125
G. He
Affiliation:
Laboratories of applied Physics California institute of Technology, Pasadena, CA 91125
C. Saipetch
Affiliation:
Laboratories of applied Physics California institute of Technology, Pasadena, CA 91125
H.A. Atwater
Affiliation:
Laboratories of applied Physics California institute of Technology, Pasadena, CA 91125
Thomas J. Watson
Affiliation:
Laboratories of applied Physics California institute of Technology, Pasadena, CA 91125
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Abstract

Epitaxial and compositionally homogeneous SnxGe1-x alloy films have been grown on Si (001) by pulsed laser deposition using elemental Sn and Ge targets. these results demonstrate that pulsed laser deposition can be used to grow alloys by overcoming the strong tendency for Sn surface segregation seen in growth by other methods such as molecular beam epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 97
Copyright
Copyright © Materials Research Society 1995

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