Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-25T19:58:04.528Z Has data issue: false hasContentIssue false

The Initial Phase of Photoelectrochemical Anodization of Si in Alkaline Media Investigated by Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Scanning Probe Microscopy (SPM)

Published online by Cambridge University Press:  30 September 2013

M. Letilly
Affiliation:
Helmholtz-Zentrum Berlin, Solar Fuel and Energy Storage Materials, Hahn-Meitner Platz 1, 14109 Berlin, Germany Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
K. Skorupska
Affiliation:
Helmholtz-Zentrum Berlin, Solar Fuel and Energy Storage Materials, Hahn-Meitner Platz 1, 14109 Berlin, Germany Brandenburg Technical University Cottbus, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
M. Aggour
Affiliation:
Faculty of Sciences, Ibn Tofail University, BP 133, 14000 Kenitra, Morocco
M. Kanis
Affiliation:
Helmholtz-Zentrum Berlin, Solar Fuel and Energy Storage Materials, Hahn-Meitner Platz 1, 14109 Berlin, Germany
H.-J. Lewerenz
Affiliation:
Helmholtz-Zentrum Berlin, Solar Fuel and Energy Storage Materials, Hahn-Meitner Platz 1, 14109 Berlin, Germany Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
Get access

Abstract

Anodic oxide formation and chemical and electrochemical etching of n-Si(111) have been investigated in alkaline media. Due to the complexity of the processes, the investigation has been restricted to the initial phase where a transitory anodic photocurrent peak is observed slightly positive from the open circuit potential (ocp). In-system photoelectron spectroscopy, performed at the U 49/2 beamline at Bessy, shows sub-monolayer silicon surface oxidation and remnant H-termination, indicating island-type oxide formation. Scanning probe microscopy shows the formation of macropores with 300-500 nm diameter and an average depth of 5-8 nm. The discussion comprises chemical and electrochemical dissolution mechanisms and routes to development of nanoemitter fuel generating devices.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Philipsen, H. G. G.; Kelly, J. J., J. Phys. Chem. B, 2005, 109, 1724517253.CrossRefGoogle Scholar
Lewerenz, H. J.; Jakubowicz, J.; Jungblut, H., Electrochem. Commun., 2004, 6, 12431248.CrossRefGoogle Scholar
Kalanyan, B. & Parsons, G., ECS Transactions, 2011, 41, 285292.CrossRefGoogle Scholar
Azzam, R.M.A; Bashara, N.M., Ellipsometry and Polarized Light, North Holland, Amsterdam, 1989.Google Scholar
Stempel, T.; Aggour, M.; Skorupska, K.; Munoz, A.; Lewerenz, H.-J., Electrochem. Commun., 2008, 10, 11841186.CrossRefGoogle Scholar
Lewerenz, H., Electrochim. Acta, 2011, 56, 1071310725.CrossRefGoogle Scholar
Lewerenz, H.; Skorupska, K.; Munoz, A.; Stempel, T.; Nüsse, N.; Lublow, M.; Vo-Dinh, T. & Kulesza, P., Electrochim. Acta, 2011, 56, 1072610736.CrossRefGoogle Scholar
Munoz, A.; Lewerenz, H., Electrochim. Acta, 2010, 55, 77727779.CrossRefGoogle Scholar
Rossi, R. C. & Lewis, N. S., J. Phys. Chem. B, 2001, 105, 1230312318.CrossRefGoogle Scholar
Walter, M. G.; Warren, E. L.; McKone, J. R.; Boettcher, S. W.; Mi, Q.; Santori, E. A. & Lewis, N. S., Chem. Rev., 2010, 110, 64466473.CrossRefGoogle Scholar
Jacobi, K.; Gruyters, M.; Geng, P.; Bitzer, T.; Aggour, M.; Rauscher, S.; Lewerenz, H.-J., Phys. Rev. B, 1995, 51, 54375440.CrossRefGoogle Scholar
Skorupska, K., J. Solid State Electr., 2009, 13, 205218.CrossRefGoogle Scholar
Allongue, P.; Kieling, V.; Gerischer, H., Electrochim. Acta, 1995, 40, 13531360.CrossRefGoogle Scholar
Shockley, W. Electrons and Holes in Semiconductors, Princeton, NJ: Van Nostrand, 1950; p 230.Google Scholar
Glembocki, O. J.; Stahlbush, R. E.; Tomkiewicz, M., J. Electrochem. Soc., 1985, 132, 145151.CrossRefGoogle Scholar
Powell, C.; Jablonski, A., Surf. Sci., 2001, 488, L547L552.CrossRefGoogle Scholar
Al-Sadah, J.; Tabet, N. & Salim, M., J. Electron Spectrosc., 2001, 114-116, 409414.CrossRefGoogle Scholar
Zhang, X. G., Electrochemistry of Silicon and its Oxide, Kluwer, New York, 2001.Google Scholar
Bongiorno, A.; Pasquarello, A., Phys. Rev. B, 2000, 62, R16326R16329.CrossRefGoogle Scholar
Emoto, T.; Akimoto, K.; Ichimiya, A., Surf. Sci., 1999, 438, 107115.CrossRefGoogle Scholar
Rappich, J.; Lewerenz, H. J. & Gerischer, H., J. Electrochem. Soc., 1993, 140, L187L189.CrossRefGoogle Scholar
Lublow, M.; Stempel, T.; Skorupska, K.; Muñoz, A. G.; Kanis, M.; Lewerenz, H. J., Appl. Phys. Lett., 2008, 93, 062112062112-3.CrossRefGoogle Scholar
Himpsel, F. J.; McFeely, F. R.; Taleb-Ibrahimi, A.; Yarmoff, J. A.; Hollinger, G., Phys. Rev. B, 1988, 39, 60846096.CrossRefGoogle Scholar
Allongue, P.; Costa-Kieling, V.; Gerischer, H., J. Electrochem. Soc., 1993, 140, 10181026.CrossRefGoogle Scholar
Jakubowicz, J.; Jungblut, H.; Lewerenz, H., Electrochim. Acta, 2003, 49, 137–46.CrossRefGoogle Scholar
Abbott, A.; Schiffrin, D.; Campbell, S., J. Electroanal. Chem., 1992, 328, 355360.CrossRefGoogle Scholar
Baum, T.; Schiffrin, D. J., J. Electroanal. Chem., 1997, 436, 239244.CrossRefGoogle Scholar
Holmes, R. R., Chem. Rev., 1990, 90, 1731.CrossRefGoogle Scholar
Chen, L.-C.; Chen, M.; Lien, C.; Wan, C.-C., J. Electrochem. Soc., 1995, 142, 170176.CrossRefGoogle Scholar
Skorupska, K.; Pettenkofer, C.; Sadewasser, S.; Streicher, F.; Haiss, W.; Lewerenz, H. J., Phys. Status Solidi B, 2011, 248, 361369.CrossRefGoogle Scholar
Shah, I. A.; van der Wolf, B. M.; van Enckevort, , , W. J.; Vlieg, E., J. Cryst. Growth, 2009, 311, 13711377.CrossRefGoogle Scholar
Menezes, S.; Lewerenz, H.-J. & Bachmann, K. J., Nature, 1983, 305, 615616.CrossRefGoogle Scholar
Lewerenz, H. J.; Goslowsky, H.; Husemann, K.-D. & Fiechter, S., Nature, 1986, 321, 687688.CrossRefGoogle Scholar
Gobrecht, J.; Gerischer, H. & Tributsch, H., Ber. Bunsen. Phys. Chem., 1978, 82, 13311335.CrossRefGoogle Scholar