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Initial Stages of Silicon Growth on the (100) Surface of Silicon By Localized Laser Cvd

Published online by Cambridge University Press:  26 February 2011

David E. Kotecki  and
Irving P. Herman
David E. Kotecki
Affiliation:
Physics Department, Lawrence Livermore National Laboratory, Livermore CA. 94550 and Department of Applied Science, University of California, Davis/Livermore, Livermore, CA. 94550
Irving P. Herman
Affiliation:
Department of Applied Physics, Columbia University, New York, N'.Y. 10027
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Abstract

This paper reports initial results of an experimental study of the early stages of silicon thin film growth on well prepared (100) c-Si surfaces by pyrolytic deposition from silane (SiH4) during localized laser chemical vapor deposition (LLCVD). The rate of silicon thin film growth during low pressure (< 10 Torr) deposition using tightly focussed laser beams (514.5 nm, ∼ 2.5 μm FWHM) is characterized and is shown to be much slower than expected based on the previously measured silane decomposition rate. Hybrid-heating experiments, in which laser heating induces a slight temperature increase on a uniformly heated substrate in the presence of silane gas, shows that growth is inhibited within the laser irradiation region. This result suggests that a nonpyrolytic mechanism contributes to silicon growth in laser CVD. Possible explanations for this nonpyrolytic growth mechanism are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 119
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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