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In-Situ UHV Electromigration in CU Films

Published online by Cambridge University Press:  15 February 2011

R. W. Vook  and
B. H. Jo
R. W. Vook
Affiliation:
Physics Department, Syracuse University, Syracuse, NY 13244vook@suhep.phy. syr. edu
B. H. Jo
Affiliation:
Physics Department, Syracuse University, Syracuse, NY 13244vook@suhep.phy. syr. edu
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Abstract

Copper stripes, current stressed under UHV, clean surface conditions, have an activation energy Q for electromigration (EM) of 0.5 eV, significantly lower than the 0.8 eV reported when the surface has been exposed to air. Application of positive or negative potentials to the stripes during EM testing raises or lowers the clean surface Q in a linear relationship in the range of 0.2 to 1. 0 eV. These results were obtained from in-situ electrical resistance measurements during which potentials up to +/− 800 volts were applied to the stripe. Thus the rate at which surface EM takes place is influenced by the sign and magnitude of the applied potential. The low Q for the in-situ clean surface studies also implies that surface diffusion is the dominant physical mechanism whereby EM damage occurs. Ex-situ SEM studies support this conclusion. This work has important implications for ULSI since numerous recent studies have indicated that surface and/or interface diffusion are present during current stressing of passivated and unpassivated fine line stripes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 31
Copyright
Copyright © Materials Research Society 1996

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