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Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing

Published online by Cambridge University Press:  15 February 2011

S. V. Hattangady ,
H. Niimi ,
S. Gandhi  and
G. Lucovsky
S. V. Hattangady
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
H. Niimi
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
S. Gandhi
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
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Abstract

Thin film dielectrics have been prepared in a cluster processing system with chambers for plasma-assisted, rapid-thermal processing, and on-line Auger electron spectroscopy (AES). A low-thermal budget process for the formation of homogeneous silicon oxynitride (OXN) alloy films is presented. This Na2-based plasma-CVD process has (i) increased process latitude for the formation of N-rich alloys, and (ii) results in lower bonded-H concentrations, in comparison with a similar NH3-based process. Gate dielectric formation consists of (i) a 300°C plasma-assisted oxidation for removal of residual hydrocarbons, and formation of an Si-SiO2 interface protected by ∼0.5-0.6 nm of oxide, (ii) a 300°C plasma-assisted CVD of oxynitride films from N2O, N2, and SiH4, and (iii) a 30 s, 900°C post-deposition rapid-thermal anneal in an ambient that contains sufficient oxygen to prevent decomposition of the Si/SiO2 interface. On-line AES and off-line infrared (IR) spectroscopy have been used to characterize chemical bonding, showing that the deposited films are pseudo-binary alloys lying on a join-line from SiO2 and Si3N4 in a ternary composition diagram. Electrical characterization of MOS capacitors, consisting of O-OXN-O structures, using C-V techniques is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 213
Copyright
Copyright © Materials Research Society 1995

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