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Integration of GaAs on Ge/Si towers by MOVPE

  • A. G. Taboada (a1), T. Kreiliger (a1), C. V. Falub (a1), M. Richter (a2), F. Isa (a3), E. Müller (a4), E. Uccelli (a2), P. Niedermann (a5), A. Neels (a5), G. Isella (a3), J. Fompeyrine (a2), A. Dommann (a5) and H. von Känel (a1)...

Abstract

We report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm tall Ge crystals were first grown as virtual substrate by low energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs structures grown on top of the Ge crystals at the transition towards full pyramids with energetically stable {111} facets. A substantial release of strain is shown in GaAs crystals with a height of 2 μm and lateral sizes up to 15×15 μm2 by both X-ray diffraction and photoluminescence.

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Integration of GaAs on Ge/Si towers by MOVPE

  • A. G. Taboada (a1), T. Kreiliger (a1), C. V. Falub (a1), M. Richter (a2), F. Isa (a3), E. Müller (a4), E. Uccelli (a2), P. Niedermann (a5), A. Neels (a5), G. Isella (a3), J. Fompeyrine (a2), A. Dommann (a5) and H. von Känel (a1)...

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