We describe an experiment designed as an upper level physics laboratory that introduces students to Raman Scattering of electronic materials and research methodology. This experiment is an effective approach in demonstrating the relationship between the Raman intensity of the scattered light from crystals and symmetry dependent Raman selection rules. In our measurements we alter the angle between the crystal axis and the polarization of the incident laser beam by Si (100) sample rotation. The three dimensional plot of the intensity profile versus the theoretical model is used to distinguish differences between various crystal planes of the same electronic sample. This experiment will combine optical analysis with materials aspects of electronic materials.
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