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Investigation into the thermoelectric properties of GaSb/InAs superlattice structures

Published online by Cambridge University Press:  25 July 2011

Philip T. Barletta
Affiliation:
Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.
Gary E. Bulman
Affiliation:
Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.
Geza Dezsi
Affiliation:
Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.
Thomas S. Colpitts
Affiliation:
Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.
Rama Venkatasubramanian
Affiliation:
Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.
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Abstract

We report on our investigation into the use of III-V superlattice structures for thermoelectric (TE) applications. Preliminary review of III-V materials trends indicate that the GaSb/InAs superlattice system should offer one of the best potentials for high thermoelectric performance in the 500K-800K range. MOCVD growth of GaSb/InAs superlattice structures was carried out, and relevant structural, thermal, and electrical characterization has been performed. TEM and XRD results demonstrate a well-ordered superlattice structure. Thermal conductivity measurements reveal a reduction in the room-temperature thermal conductivity of GaSb/InAs superlattices (4.4-10.0 W/m-K), relative to either binary GaSb (32 W/m-K) or InAs (27 W/m-K). Additionally, we have worked to optimize the thermoelectric power factor (α2σ), studying both Se- and Te-doping of the superlattice structures, in an effort to demonstrate optimal thermoelectric performance. Our results demonstrate a maximum ZT of 0.36 at 400K for optimally doped n-type GaSb/InAs superlattice structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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