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Investigation of Interface States on Mbe CoSi2/Si Schottky Contacts by Forward Bias Capacitance Measurement

Published online by Cambridge University Press:  28 February 2011

H. Y. Chen ,
Y. C. Kao ,
Y. J. Mii  and
K. L. Wang
H. Y. Chen
Affiliation:
Device Research Laboratory,Electrical Engineering Department,University of California,Los Angeles,Los Angeles,Ca 90024 Permanent address: Institute of Microelectronics,Tsinghua University,Beijing,China
Y. C. Kao
Affiliation:
Device Research Laboratory,Electrical Engineering Department,University of California,Los Angeles,Los Angeles,Ca 90024
Y. J. Mii
Affiliation:
Device Research Laboratory,Electrical Engineering Department,University of California,Los Angeles,Los Angeles,Ca 90024
K. L. Wang
Affiliation:
Device Research Laboratory,Electrical Engineering Department,University of California,Los Angeles,Los Angeles,Ca 90024
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Abstract

The properties of the interface states of MBE grown CoSi2/n-Si(111) intimate contacts has been investigated using forward bias capacitance measurement. The barrier height øbn for this structure is 0.66±0.01 V. It has been found that there is an interface state band located in 0.44–0.50 eV bfow the conduction band edge of Si. The density of states D it is about 4×1012 cm−2 eV−1, lower than those made by other methods. This intrface state band is in equilibrium with Si and the charge exchange occurs mainly with the electrons in the conduction band of Si. The electron capture cross section oa is about 3×10−15 cm2 . In addition, some discrete interface states were found at 0.53 eV, 0.51 eV and 0.47 eV below the conduction band edge of Si, respectively for several samples. The density of states D it ranges (1.5–3.5)×1010 cm−2 . They are probably caused by localized point defects formed during CoSi2 growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 439
Copyright
Copyright © Materials Research Society 1987

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References

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