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Ion Channeling Analysis of Disorder*

Published online by Cambridge University Press:  15 February 2011

S. T. Picraux
S. T. Picraux*
Affiliation:
Sandia National Laboratoriest†, Albuquerque, New Mexico, 87185, USA
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Abstract

The use of ion channeling to characterize disorder in semiconductors is briefly reviewed. At high defect densities the ion channeling/backscattering technique can give the depth distribution of defects with a resolution ∼ 10 nm. Quantitative analysis of the defect depth profile requires that a single type of defect dominates the scattering of partiicles out of channeling trajectories. This scattering process is characterized by two defect-specific quantities: the direct scattering factor and the dechanneling cross-section. For impurity-associated defects the lattice location of the impurity atoms can be determined to within ∼ 0.1 Å by simultaneously measuring the impurity and host atom signals as a function of tilt angle about channeling directions. The channeling technique can detect a wide range of intrinsic defects including interstitials, dislocations, stacking faults, microtwins, and amorphous clusters. Examples of the application of channeling to study defects in silicon will be given for the cases: 1) hydrogen trapping at defects; 2) ion implantation doping; and 3) epitaxial growth of layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 135
Copyright
Copyright © Materials Research Society 1981

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Footnotes

†

A U. S. Department of Energy facility.

*

This work was supported by the Department of Energy, Division of Basic Energy Sciences, under contract DE-AC04-76-DP00789.

References

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