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Ion Implantation Doping of InGaP, InGaAs, and InAlAs

Published online by Cambridge University Press:  26 February 2011

S. J. Pearton ,
J. M. Kuo ,
W. S. Hobson ,
E. Hailemarian ,
F. Ren ,
A. Katz  and
A. P. Perley
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Kuo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
E. Hailemarian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. P. Perley
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The activation of Si+ and Be+ ions implanted into InGaP, InGaAs or InAlAs grown by GSMBE and OMVPE was investigated as a function of ion dose and annealing temperature. Activation efficiencies close to 100% were obtained in InGaP and InGaAs for Be doses up to ∼1014 cm−2 and annealing temperatures of 700–850°C. Activation of Be was less efficient in InAlAs. By contrast, implanted Si displayed a saturation in active sheet electron densities at 1–3 × 1013 cm−2 and required higher annealing temperatures for optimum activation efficiency. High sheet resistance (≤108 μ/□) regions were created by O+ implantation into n+ InGaP or InAlAs, with hopping conduction dominating carrier transport in the bombarded material. For post-implant annealing temperatures above 750°C, the conductivity was restored to its initial value. No evidence was found for the creation of electrically active oxygen-related deep levels in either material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 797
Copyright
Copyright © Materials Research Society 1992

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References

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