Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-25T07:09:15.704Z Has data issue: false hasContentIssue false
  • English
  • Français

Island Dynamics in Film Aging

Published online by Cambridge University Press:  25 February 2011

S. P. Marsh  and
M. E. Glicksman
S. P. Marsh
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5000
M. E. Glicksman
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Get access

Abstract

A theory is presented which describes the capillary-driven aging of discontinuous thin films on a substrate, where the primary transport mechanism among the domains is two-dimensional diffusion of species over the substrate. This theory employs a statistical dynamics formulation, whereby the average growth rate for each domain size class is determined relative to the critical (zero-growth) domain size. The time dependence of the critical size is determined through a global constraint on the individual fields. The effect of fractional area coverage, Aa, is accounted for through a second global constraint over the distribution of island sizes.

This theory yields a self-similar size distribution that is fairly insensitive to Aa. The critical island radius, R*, is found to increase asymptotically as the cube-root of time. The growth rate of R* increases with Aa, which results from the closer proximity of the islands and steeper concentration gradients as Aa increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 63
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lifshitz, I.M. and Slyozov, V.V., J. Phys. Chem. Solids 19 (1/2), 35 (1961).Google Scholar
2. Wagner, C., Z. Elektrochem 65, 581 (1961).Google Scholar
3. Voorhees, P.W., J. Stat. Phys. 38 (1/2), 231 (1985).Google Scholar
4. Mullins, W.W., J. Appl. Phys. 59 (4), 1341 (1986).Google Scholar
5. Tsumuraya, K. and Miyata, Y., Acta Metall. 31 (3), 437 (1983).Google Scholar
6. Chakraverty, B.K., J. Phys. Chem. Solids 28, 2401 (1967).Google Scholar
7. Atwater, H. A. and Yang, C.M., J. Appl. Phys. 67(10), 6202 (1990).Google Scholar
8. Voorhees, P.W. and Glicksman, M.E., Metall. Trans 15A, 1081 (1984).Google Scholar
9. Marsh, S.P., MS thesis, Rensselaer Polytechnic Institute (1984).Google Scholar
10. Marqusee, J.A., J. Chem. Phys. 81 (2), 976 (1984).Google Scholar
11. Brailsford, A.D. and Wynblatt, P., Acta Metall. 27, 489 (1979).Google Scholar
12. Thompson, C.V., Acta Metall. 36(11), 2929 (1988).Google Scholar
13. Marsh, S.P. and Glicksman, M.E., in Simulation and Theory of Evolving Microstructures. edited by Anderson, M.P. and Rollett, A.D. (The Minerals, Metals & Materials Society, Warrendale, PA, 1990), p. 167.Google Scholar