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Kinetics of Silicon Oxide Thin Film Deposition From Silane and Disilane with Nitrous Oxide.

  • Jonathan D. Chapple-Sokol (a1), Carmen J. Giunta (a1) and Roy G. Gordon (a1)
Abstract
Abstract

A mechanistic study of the deposition of silicon oxide films (SiOx, 0 < x ≤2) from silanes with nitrous oxide was performed. The depositions of non-stoichiometric films from silane and stoichiometric silicon dioxide from disilane were dominated by SiH2 generation from the decomposition of the silicon-containing reactant. The depositions of stoichiometric films from silane were found to follow chain reaction kinetics initiated by the homogeneous decomposition of N2O.

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1.Mochizuki H., Aoki T., Yamoto H., Okayama M., Abe M., and Ando T., Japan J. Appl. Phys. Suppl. 15, 41 (1976).
2.Hitchman Michael L. and Kane James, J. Crystal Growth 55, 485 (1981).
3.Purnell J.H. and Walsh R., Proc. Roy. Soc. (London) A293 543 (1966).
4.Baulch D.L., Drysdale D.D., Home D.G., and Lloyd A.C., Evaluated Kinetic Data for High Temperature Reactions, Vol 2 (Butterworths, London, 1973), pp. 6993.
5.Bowrey M. and Purnell J.H., Proc. Roy. Soc. (London) A321, 341 (1971).
6.Inoue Gen and Suzuki M., Chem. Phys. Lett. 122,361 (1985).
7.Atkinson R. and Pitts J.N. Jr., Intern. J. Chem. Kinet. 10, 1151 (1978).
8.Agrawalla B.S. and Setser D.W., J. Chem. Phys. 86, 5421 (1987).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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