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Kinetics of Silicon Oxide Thin Film Deposition From Silane and Disilane with Nitrous Oxide.

  • Jonathan D. Chapple-Sokol (a1), Carmen J. Giunta (a1) and Roy G. Gordon (a1)

A mechanistic study of the deposition of silicon oxide films (SiOx, 0 < x ≤2) from silanes with nitrous oxide was performed. The depositions of non-stoichiometric films from silane and stoichiometric silicon dioxide from disilane were dominated by SiH2 generation from the decomposition of the silicon-containing reactant. The depositions of stoichiometric films from silane were found to follow chain reaction kinetics initiated by the homogeneous decomposition of N2O.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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