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Laser Recrystallization of InP Films on Oxidized Si Substrate

Published online by Cambridge University Press:  28 February 2011

Li Xiqiang ,
Zhu Weiwen ,
Lin Chenglu ,
Wang Weiyuan  and
Tsou Shihchang
Li Xiqiang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zhu Weiwen
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Lin Chenglu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Wang Weiyuan
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Tsou Shihchang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

The InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 113
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Fan, J.C.C. and Johnson, N.M. (editor), Energy Beam-Solid Interactions and Transient thermal Processing, (North-Holland, New York, 1984).Google Scholar
2.Wang, C.C., Keavneg, C.J., Atwater, H.A., Thompson, C.V. and Smith, H.I., ibid, pp 627–632.Google Scholar
3.Xiqiang, Li, Zhihao, Chen, Chenlu, Lin and Weiyuan, Wang, ibid, pp 621–626.Google Scholar
4.Yershov, N.I. and Givargizov, E.I., J. Cryst. Growth, 66, 239 (1984).Google Scholar
5.Okamoto, K. and Imai, T., Appl. Phys. Letters, 42, 972 (1983).Google Scholar
6.Xiqiang, Li, J. Applied Science (in press).Google Scholar
7.Bachmannand, K.J.Buchler, E., J. Electrochem. Soc., 121, 835 (1974).Google Scholar
8.Ozisik, M. Neeati, Heat Conduction (Wiley-Interscience, New York, 1980), pp 209.Google Scholar
9.Neuberger, M., Handbook of Electronic Material, 12, III-V Semiconducting Compounds, (IFI/HENUM, New York, 1971).Google Scholar