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Lateral grain growth in poly-Si films by gas flame high temperature annealing

Published online by Cambridge University Press:  10 February 2011

W. F. Qu ,
A. Kitagawa ,
Y. Masaki  and
M. Suzuki
W. F. Qu
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa 920, Japan
A. Kitagawa
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa 920, Japan
Y. Masaki
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa 920, Japan
M. Suzuki
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa 920, Japan
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Abstract

Poly-Si films with the preferential orientation to a random, a (100) and a (110) texture were annealed using a flat gas flame. Remarkable lateral grain growth of (111) grains was observed for poly-Si films with a random and a (110) texture, while in (100) texture films the growth of (100) grains predominated over other grains. There existed tensile stress in as-prepared films. Grains with different orientation were under a different tensile stresses, and such stress distributions on the orientation of grains were different for different textures. The tensile stress was found to become larger in grown grains after high temperature annealing, while the stress on shrunken grains decreased or turned to compressive stress after annealing. These results indicate that strain energy stored in grains is one of the important driving forces in secondary grain growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 89
Copyright
Copyright © Materials Research Society 1997

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