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Lattice Location of Rare Earth Ions in Semiconductors: Interpretation and Limitations of Using g Values

Published online by Cambridge University Press:  01 February 2011

David Carey
David Carey*
Affiliation:
Nanoelectronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom. Email: David.Carey@surrey.ac.uk
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Abstract

The g values of rare earth ions obtained from either paramagnetic resonance or Zeeman measurements are often used to interpret the location and/or environment surrounding rare earth ions. In the case of centres with cubic symmetry the g value can be used to distinguish between substitutional and interstitial sites. For centres with less than cubic symmetry the average g value, taken as 1/3 trace of the g tensor, is often used as an indication of the lattice location and/or a measure of the strength of the local crystal field. This approach is widely used but is based on the assumption that the non-cubic terms in the total crystal field potential are small compared with the cubic crystal field. In this paper we have explored this assumption by calculating the principal g values in axial crystal fields for the Er3+ ion. We examine the limits over which the average g value approach is valid. Comparison is made with published results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V6.7
Copyright
Copyright © Materials Research Society 2005

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