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Light-Scattering Measurements of CVD Silicon Carbide

Published online by Cambridge University Press:  21 February 2011

B. W. Sheldon  and
T. M. Besmann
B. W. Sheldon
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee
T. M. Besmann
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee
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Abstract

Surface morphologies created by the chemical vapor deposition (CVD) of silicon carbide were examined with light scattering. Silicon carbide was deposited from methyltrichlorosilane under various conditions to create different surfaces. A helium neon laser was used, and the scattered light was measured over a range of scattering angles. These measurements are compared with scanning electron microscopy (SEM) observations and profilometer measurements of the same surfaces. In theory the scattered light contains all of the information needed to provide a statistical description of a given surface; however, a complete vector theory for the scattering phenomena is too complex to provide any simple basis for experimental analysis. The application and limits of existing descriptions of scattering from a rough surface are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 99
Copyright
Copyright © Materials Research Society 1990

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Footnotes

*

Research sponsored by the U.S. Department of the Air Force, Office of Scientific Research, Bolling Air Force Base, D.C. under U.S. Department of Energy Interagency Agreement 1854-C027-Al under contract DE-ACO5-84OR21400 with Martin Marietta Energy Systems, Inc.

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