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LnPdSb and Ln3Au3Sb4: New Thermoelectric Materials

Published online by Cambridge University Press:  10 February 2011

K. Mastronardi
Affiliation:
Department of Chemistry and Princeton Materials Institute, Princeton University, Princeton NJ 08540
D. Young
Affiliation:
Department of Chemistry and Princeton Materials Institute, Princeton University, Princeton NJ 08540
C.-C. Wang
Affiliation:
Department of Chemistry and Princeton Materials Institute, Princeton University, Princeton NJ 08540
A. P. Ramirez
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill NJ 07974
P. Khalifah
Affiliation:
Department of Chemistry and Princeton Materials Institute, Princeton University, Princeton NJ 08540
R. J. Cava
Affiliation:
Department of Chemistry and Princeton Materials Institute, Princeton University, Princeton NJ 08540
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Abstract

The thermoelectric properties near ambient temperature of half-Heusler alloys based on HoPdSb, DyPdSb, and ErPdSb are reported. The Seebeck coefficients are between 60 and 250 μV/K. The resistivities range between 0.6 and 20 mΩcm, and the majority carriers are p-type. Thermal conductivities are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band structure calculations are presented, and are compared to those for ZrNiSn. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials. The thermoelectric properties of another family of cubic symmetry antimonides, based on Ho3Au3Sb4 and Sm3Au3Sb4, are also reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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