Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-25T17:45:51.883Z Has data issue: false hasContentIssue false
  • English
  • Français

Local Structure Surrounding Implanted As+ Ions in Polysulfone Films

Published online by Cambridge University Press:  15 February 2011

R. A. Mayanovic ,
Y. Feng ,
K. W. Groh ,
Y. Wang ,
R. E. Giedd  and
M.G. Moss
R. A. Mayanovic
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
Y. Feng
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
K. W. Groh
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
Y. Wang
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
R. E. Giedd
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
M.G. Moss
Affiliation:
Brewer Science Inc., Rolla, MO 65401
Get access

Abstract

Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms to form As- (3) 0 based molecular structures having As-0 bond lengths equal to 1.81±0.02 Å. In comparison to samples implanted in the dose range 101S to 1016 ions/cm2, the molecular environment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighbor O atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 113
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ashby, M.F., MRS Bull. 18, 43 (1993).Google Scholar
2. Venkatesan, T., Nucl. Instrum. Meth. B7/8, 416 (1985).Google Scholar
3. Marietta, G., Nucl. Instrum. Meth. B46, 21 (1990).Google Scholar
4. Heald, S.M., in X-Ray Absorption: Principles. Applications. Techniques of EXAFS. SEXAFS. and XANES. edited by Koningsberger, D.C. and Prins, R. (John Wiley & Sons, New York, 1988), p. 87.Google Scholar
5. Zeigler, J.F, Biersack, J.P., and Littmark, U., The Stopping and Ranges of Ions in Solids (Pergamon, New York, NY, 1985).Google Scholar
6. Sayers, D. E. and Bunker, B. A., in X-Ray Absorption: Principles. Applications. Techniques of EXAFS. SEXAFS. and XANES. edited by Koningsberger, D.C. and Prins, R. (John Wiley & Sons, New York, 1988), p. 211.Google Scholar
7. Newville, M., Livins, P., Yacoby, Y., Rehr, J.J., and Stern, E.A., Phys. Rev. B 47, 14126 (1993).Google Scholar
8. Mustre de Leon, J., Rehr, J.J., Zabinsky, S.I., and Albers, R.C., Phys. Rev. B 44, 4146 (1991).Google Scholar