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Localization Phenomena, Photoluminescence and Raman Scattering in nc-Si and nc-Si/a-SiO2 Composites

Published online by Cambridge University Press:  15 February 2011

S. veprek ,
T. Wirschem ,
M. Rückschloβ ,
C. Ossadnik ,
J. Dian ,
S. Perna  and
I. Gregora
S. veprek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Str. 4, D-85747 Garching/Munich, Germany
T. Wirschem
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Str. 4, D-85747 Garching/Munich, Germany
M. Rückschloβ
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Str. 4, D-85747 Garching/Munich, Germany
C. Ossadnik
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Str. 4, D-85747 Garching/Munich, Germany
J. Dian
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Str. 4, D-85747 Garching/Munich, Germany
S. Perna
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Str. 4, D-85747 Garching/Munich, Germany
I. Gregora
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Str. 4, D-85747 Garching/Munich, Germany
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Abstract

We present evidence for the large increase of the band gap due to the quantum localization in nc-Si imbedded in a-SiO2 matrix, which is in agreement with the original theoretical calculations. This, together with additional experimental data explains the large red shift between the onset of the excitation spectra and the photoluminescence. This also provides strong support for the mechanism of the photoluminescence which originates from radiative centers either at the Si/SiO2 interface or within the SiO2 matrix. The strong decrease of the efficiency of the photoluminescence due to a decrease of the thickness of the a-SiO2 grain boundaries is shown and its origin discussed. Delocalization of the photogenerated charge carriers due to ultra thin a-SiO2 is excluded as the cause of this effect. Microwave absorption is used to study the effect of the grain boundaries on the localization and delocalization of photogenerated charge carriers in pure nc-Si together with concomitant phenomena observed in Raman scattering. Finally we show the strong decrease of the photoluminescence decay time to ≤ 500 ps due to molecular-like radiative centers which are formed in the nc-Si/SiO2 composites by appropriate doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 141
Copyright
Copyright © Materials Research Society 1996

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