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Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature

Published online by Cambridge University Press:  01 February 2011

Yufeng Li ,
Wei Zhao ,
Yong Xia ,
Mingwei Zhu ,
Jayantha Senawiratne ,
Theeradetch Detchprohm ,
E. Fred Schubert  and
Christian M Wetzel
Yufeng Li
Affiliation:
liy10@rpi.edu, Rensselaer Polytechnic Institute, Department of Physics, Applied Physics, and Astronomy, 6309 CII, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY, 12180, United States, 518-276-3899
Wei Zhao
Affiliation:
zhaow2@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street,, Troy, NY, 12180, United States
Yong Xia
Affiliation:
xiay2@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street,, Troy, NY, 12180, United States
Mingwei Zhu
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street,, Troy, NY, 12180, United States
Jayantha Senawiratne
Affiliation:
senawj@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street,, Troy, NY, 12180, United States
Theeradetch Detchprohm
Affiliation:
detcht@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street,, Troy, NY, 12180, United States
E. Fred Schubert
Affiliation:
efschubert@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street,, Troy, NY, 12180, United States
Christian M Wetzel
Affiliation:
wetzel@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street,, Troy, NY, 12180, United States
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Abstract

The electroluminescence, photoluminescence and cathodoluminescence of GaInN/GaN multiple quantum well light emitting diode dies are analyzed at variable low temperature. Three dies of nominally identical structure but strongly different RT performance from 510 nm to 525 nm have been studied. The electroluminescence peak energy exhibits a blue shift from RT to 158 K followed by a red shift for lower temperature. In the same low-temperature range, a secondary emission peak appears near 390 nm (3.18 eV) that resembles a donor-acceptor pair transition from GaN. Depth profiling spectroscopy of this transition at 77 K reveals its location either in the unintentionally doped quantum barriers or within the n-GaN layer, rather than the commonly believed Mg doped p-type GaN layers. The external quantum efficiency of each die increases as the temperature is lowered. A maximum is reached for all near 158 K while for lower temperature as low as 7.7 K, the efficiency continuously drops. The pronounced efficiency maximum is tentatively assigned to a combination of temperature dependent mobility and shift of the actual pn-junction location.

Keywords

GaIII-Voptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-12
Copyright
Copyright © Materials Research Society 2007

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References

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