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Low Dislocation Soi by Oxygen Implantation

Published online by Cambridge University Press:  28 February 2011

A.H. Van Ommen
A.H. Van Ommen*
Affiliation:
Philips Research Laboratories, 5600JA Eindhoven, The Netherlands
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Abstract

Recent results on silicon on insulator structures formed by implantation of oxygen and subsequent high temperature annealing will be discussed. The resulting silicon on insulator structure has sharp interfaces and a dislocation density of less than 105 cm -2 in the top silicon film. This density of defects is several orders of magnitude lower than previously reported values. The relation between the microstructure after implantation and this relatively low defect density will be discussed. Silicon point defects will be shown to play an important role in the establishment of the microstructure during implantation. Relations between implantation conditions, point defect concentrations and microstructure will be discussed to come to the formulation of the boundary conditions for the formation of high quality silicon on insulator material by this method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 43
Copyright
Copyright © Materials Research Society 1988

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