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Low Energy Ion Implantation of as During Si-MBE

Published online by Cambridge University Press:  26 February 2011

E. J. H. Collart ,
D. J. Gravesteijn ,
E. G. C. Lathouwers  and
W. J. Kersten
E. J. H. Collart
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands.
D. J. Gravesteijn
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands.
E. G. C. Lathouwers
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands.
W. J. Kersten
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands.
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Abstract

As-doped Si layers were grown using Molecular Beam Epitaxy (MBE) together with simultaneous Low Energy Ion Implantation (LEII). The influence of growth conditions such as Si-substrate temperature, ion energy and ion dose was investigated using structural and electrical characterization techniques. Below the As solid solubility limit, well defined and 100 % electrically active As-doped layers were grown. Above solid solubility segregation occured, with broadened profiles and less than 100 % activation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 115
Copyright
Copyright © Materials Research Society 1995

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