Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-16T11:54:10.213Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Growth and Application of Zinc Oxide Nanowires using Zinc Oxide Seeds

Published online by Cambridge University Press:  01 February 2011

Lee Sunyoung ,
Myoung Hey Jin ,
Maeng Sunglyul  and
Kim Sang-Hyeob
Lee Sunyoung
Affiliation:
tjsdud@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
Myoung Hey Jin
Affiliation:
mhj64276@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
Maeng Sunglyul
Affiliation:
slm221@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
Kim Sang-Hyeob
Affiliation:
shk1028@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
Get access

Abstract

The growth of ZnO nanowire arrays on a variety of substrates using a chemical wet process is presented. ZnO seeds can act as a nucleation layer for wire growth and ZnO nanowire arrays can have direct contact with a variety of substrates. The structural and optical properties of ZnO nanowire arrays grown at 90°C are investigated. FESEM and X-ray diffraction observations reveal that the crystalline ZnO nanowire arrays are preferentially oriented along the c axis. The room temperature photoluminescence (PL) measurements had shown ultraviolet peaks and a deep level peak. After annealing at 900°C for 1 min. by RTA, the deep level peak became much weaker and the band-edge emission PL was much stronger.

Keywords

sol-gelnanostructureZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1018: Symposium EE – Applications of Nanotubes and Nanowires , 2007 , 1018-EE05-19
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Park, H. K, Oh, M. H, Kim, S. W, Kim, G. H, Youn, D. H, Lee, S., Kim, S. H, Maeng, S. L, ETRI Journal, 28, 787, (2006)Google Scholar
[1] , Park, Yi, W.I., Kim, J. W, Appl Phys Lett, 82, 4358 (2003).Google Scholar
[2] Sharma, A.K., Narayan, J., Muth, J. F, Teng, C. W, Jin, C., Kvit, A., Appl. Phys. Lett. 75, 3327(1999)Google Scholar
[3] Chik, H., Liang, J., Cloutier, S. G, N.Kouklin, and Xu, J. M, Appl. Phys. Lett, 84, 3376 (2003).Google Scholar
[4] Greene, L. E, Law, M., Goldberger, J., Kim, F., Johnson, J. C, Zhang, Y., Saykally, R. J, Yang, P., Angew. Chem., Int. Ed. 42, 3031 (2003).Google Scholar
[5] Greene, L. E, Law, M., Tan, D. H, Montano, M., Goldberger, J., Somorjai, G., Yang, P., Nano Letters, 5, 1231 (2005)Google Scholar
[6] Law, M., Greene, L. E, GoldbergerJohnson, J., Saykally, R. J, Yang, P., Nature Mater. 6, 455–459 (2005).Google Scholar
[7] Quang, H. L, Chua, S. J, LohChen, K. P, Thompson, C. V, Fitzgerald, E. A, Advanced Materials for Micro- and Nano-Systems Jan-(2005)Google Scholar
[8] Zu, P., Tang, Z.K., Wong, G.K.L., Kawasaki, M., Ohtomo, A., Koinuma, H., Segawa, Y., Solid State Commun. 103, 459, (1997).Google Scholar
[9] Bagnall, D. M., Chen, Y.F., Shen, M.Y., Zhu, Z., Goto, T., Yao, T., J. Crystal Growth 184, 605, (1998).Google Scholar
[10] Dijken, A. van, Meulenkamp, E. A, Vanmaekelbergh, D., Meijerink, A., J. Lumin. 90, 23(2000).Google Scholar
[11] Vanheusden, K., Warren, W.L, Seager, C. H, Tallant, D. R, Voigt, J. A, Gnade, B. E, J. Appl Phys., 79, 7983 (1996).Google Scholar
[12] Zeuner, A., Alves, H., Hofmann, D. M, Mayer, B. K, Heuken, M., Appl. Phys. Lett., 80, 2078 (2002).Google Scholar
[13] Ohashi, N., Ishigaki, T., Okada, N., Sekigushi, T., Sakaguchi, T., Haneda, H., Appl. Phys. Lett. 80, 2869, (2002).Google Scholar
[14] Geng, C. Y, Shen, H. P, Liao, H. C, Chen, S. Y, Appl. Phys. Lett. 86, 183103, (2005).Google Scholar
[15] Quang, L. H, Chua, S. J, Loh, K. P, Fitzgerald, E., J.Crystal Growth 287, 157, (2006).Google Scholar