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Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD)

Published online by Cambridge University Press:  01 February 2011

Stephan Warnat ,
Markus Hoefer ,
Lothar Schaefer ,
Helmut Foell  and
Peter Lange
Stephan Warnat
Affiliation:
stephan.warnat@isit.fraunhofer.de, Fraunhofer Institute for Silicon Technologies, Module Integration, Fraunhofer Strasse 1, Itzehoe, 25524, Germany
Markus Hoefer
Affiliation:
hoefer@ist.fraunhofer.de, Fraunhofer Institute for Surface Engineering and Thin Films, Braunschweig, 38108, Germany
Lothar Schaefer
Affiliation:
schaefer@ist.fraunhofer.de, Fraunhofer Institute for Surface Engineering and Thin Films, Braunschweig, 38108, Germany
Helmut Foell
Affiliation:
hf@tf.uni-kiel.de, Christian-Albrechts-University, Technical Faculty, Kiel, 24143, Germany
Peter Lange
Affiliation:
peter.lange@isit.fraunhofer.de, Fraunhofer Institute for Silicon Technology, Itzehoe, 25524, Germany
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Abstract

Silicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in “through silicon vias” (TSV) technologies in combination with optical devices, which require very low temperatures (<200 °C), have been investigated. They reveal sufficiently good properties for the planned applications.

Keywords

chemical vapor deposition (CVD) (deposition)infrared (IR) spectroscopypackaging
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1036: Symposium M – Materials and Hyperintegration Challenges in Next-Generation Interconnect Technology , 2007 , 1036-M03-01
Copyright
Copyright © Materials Research Society 2008

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References

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