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Low-Temperature Bonding of Ceramics by Sol-Gel Processing

Published online by Cambridge University Press:  15 March 2011

C.J Barbé
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
D.J. Cassidy
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
G. Triani
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
B.A. Latella
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
D.R.M. Mitchell
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
A. Day
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
K. Short
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
J.R. Bartlett
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
J.L. Woolfrey
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
G.A. Collins
Affiliation:
ANSTO Materials Division, PMB 1 Menai NSW 2234, Australia
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Abstract

Sol-gel bonding was produced between smooth, clean substrates of silicon and polycrystalline alumina by spin-coating solutions containing partially hydrolysed silicon alkoxides. The two coated-substrates were assembled and the resulting sandwich was fired at temperatures ranging from 300 to 600°C. The coatings and bonded substrates were investigated using SEM, TEM and micro-indentation. For silicon wafers, an optimum water-to-alkoxide molar ratio of 10 and hydrolysis water pH of 2 was found. Such conditions led to relatively dense films (>90%), resulting in bonds with a fracture energy of 3.5 J/m2, which is significantly higher than those obtained using hydrophilic wafer bonding (typically 1.5 J/m2).

Poly-crystalline alumina substrates were similarly bonded at 600°C; the opt imised silica sol-gel chemistry yielded interfaces with fracture energy of 4 J/m2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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